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F. Fasching, S. Halama, and S. Selberherr, editors. Technology CAD Systems. Springer, 1993.

F. Fasching, W. Tuppa, and S. Selberherr. VISTA-The Data Level. IEEE Trans.Computer-Aided Design, 13(1):72-81, 1994.

W. Fichtner and D. Aemmer, editors. Simulation of Semiconductor Devices and Processes, volume 4, Konstanz, 1991. Hartung-Gorre.

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M.V. Fischetti and S.E. Laux. Monte Carlo Study of Electron Transport in Silicon Inversion Layers. Physical Review B, 48(4):2244-2274, 1993.

M.V. Fischetti, S.E. Laux, and W. Lee. Monte Carlo Simulation of Hot-Carrier Transport in Real Semiconducter Devices. Solid-State Electron., 32(12):1723-1729, 1989.

A. Forghieri, R. Guerrieri, P. Ciampolini, A. Gnudi, M. Rudan, and G. Baccarani. A New Discretization Strategy of the Semiconductor Equations Comprising Momentum and Energy Balance. IEEE Trans.Computer-Aided Design, CAD-7(2):231-242, 1988.

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A.A. Grinberg and M. Shur. A New Analytical Model for Heterostructure Field-Effect Transistors. J.Appl.Phys., 65(5):2116-2120, 1989.

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P. Habas, O. Heinreichsberger, Ph. Lindorfer, P. Pichler, H. Pötzl, A. Schütz, S. Selberherr, M. Stiftinger, and M. Thurner. MINIMOS 5 User's Guide. Technische Universität Wien, Austria, 1990.

M. Hackel, H. Kosina, and S. Selberherr. Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields. In Selberherr et al. [71], pages 65-68.

S. Halama, F. Fasching, H. Pimingstorfer, W. Tuppa, and S. Selberherr. Consistent User Interface and Task Level Architecture of a TCAD System. In Proc.NUPAD IV, pages 237-242, 1992.

S. Halama and S. Selberherr. Future Aspects of Process and Device Simulation. In Electron Technology 26,1, pages 49-57, 1993.

O. Heinreichsberger. Transiente Simulation von Silizium-MOSFETs. Dissertation, Technische Universität Wien, 1992.

O. Heinreichsberger, M. Thurner, and S. Selberherr. Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation. In Selberherr et al. [71], pages 85-88.

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C. Jacoboni and P. Lugli. The Monte Carlo Method for Semiconductor Device Simulation. Springer, 1989.

C. Jacoboni and L. Reggiani. The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Applications to Covalent Materials. Review of Modern Physics, 55(3):645-705, 1983.

W. Kausel, H. Pötzl, G. Nanz, and S. Selberherr. Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor. Solid-State Electron., 32(9):685-709, 1989.

H. Kosina, Ph. Lindorfer, and S. Selberherr. Monte-Carlo - Poisson Coupling Using Transport Coefficients. Microelectronic Engineering, pages 53-56, 1991.

H. Kosina and S. Selberherr. Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors. Jap.J.Appl.Phys., 29(12):L2283-L2385, 1990.

H. Kosina and S. Selberherr. Efficient Coupling of Monte Carlo and Drift Diffusion Method with applications to MOSFET's. In Ext. Abstracts of the Int.Conf. on Solid State Devices and Materials, pages 139-142, Sendai, 1990. Komiyama.

H. Kosina and S. Selberherr. A Monte Carlo MOSFET simulator based on a new method for the Poisson-transport iteration. In Proc.NUPAD IV, pages 117-122, 1992.

H. Kosina and S. Selberherr. A Hybrid Device Simulator that Combines Monte Carlo and Drift-Diffusion Analysis. IEEE Trans.Computer-Aided Design, 13(2):201-210, 1994.

Q. Lin, N. Goldsman, and G.Ch. Tai. A Globally Convergent Method for Solving the Energy Balance Equation in Device Simulation. Solid-State Electron., 36(3):411-419, 1993.

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M.S. Mock. A Time-Dependent Numerical Model of the Insulated-Gate Field-Effect Transistor. Solid-State Electron., 24:959-966, 1981.

M.S. Mock. Analysis of Mathematical Models of Semiconductor Devices. Boole Press, Dublin, 1983.

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G. Nanz. Numerische Methoden in der zweidimensionalen Bauelementesimulation. Dissertation, Technische Universität Wien, 1989.

G. Nanz, P. Dickinger, and S. Selberherr. Calculation of Contact Currents in Device Simulation. IEEE Trans.Computer-Aided Design, 11(1):128-136, 1992.

J.O. Nylander, F. Masszi, S. Selberherr, and S. Berg. Computer Simulations of Schottky Contacts with a Non-Constant Recombination Velocity. Solid-State Electron., 32(5):363-367, 1989.

H. Pimingstorfer, S. Halama, S. Selberherr, K. Wimmer, and P. Verhas. A Technology CAD Shell. In Fichtner and Aemmer [19], pages 409-416.

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C. Pommerell and W. Fichtner. Memory Aspects and Performance of Iterative Solvers. Technical Report 92-2, Integrated Systems Laboratory, ETH Zürich, 1992.

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Y. Saad. SPARSKIT: A Basic Tool Kit for Sparse Matrix Computations. Technical report, RIACS, NASA Ames Research Center, Moffett Field, CA 94035, May 1990.

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G. Schrom, D. Liu, Ch. Pichler, Ch. Svensson, and S. Selberherr. Analysis of Ultra-Low-Power CMOS with Process and Device Simulation. In 24th European Solid State Device Research Conference - ESSDERC'94, 1994. Accepted for publication.

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S. Selberherr, W. Hänsch, M. Seavey, and J. Slotboom. The Evolution of the MINIMOS Mobility Model. AEÜ, 44(3):161-172, 1990.

S. Selberherr and H. Kosina. Simulation of Nanometer MOS-Devices with MINIMOS. In Proc.VPAD, pages 2-5, 1990.

S. Selberherr, H. Stippel, and E. Strasser, editors. Simulation of Semiconductor Devices and Processes, volume 5. Springer, 1993.

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H. Stippel, F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, W. Tuppa, K. Wimmer, and S. Selberherr. Implementation of a TCAD Framework. In Proc. European Simulation Multiconference ESM 92, pages 131-135, 1992.

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J.R. Zhou and D.K. Ferry. Simulation of Ultra-Small GaAs MESFET Using Quantum Moment Equations. IEEE Trans.Electron Devices, 39(3):473-478, March 1992.

Martin Stiftinger
Fri Oct 21 18:22:52 MET 1994